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旋风小土豆
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2024-04-24 加入
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6个月前
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Quantum electronic transport in polarization-engineered GaN/InGaN/GaN tunnel junctions
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Efficiency degradation induced by surface defects-assisted tunneling recombination in GaN/InGaN micro-light-emitting diodes
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Modeling direct interband tunneling. II. Lower-dimensional structures
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InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current
6个月前
已完结
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