Lv21
122 积分 2023-05-09 加入
黄嘻嘻耶
1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET
16天前
已完结
NROM: A novel localized trapping, 2-bit nonvolatile memory cell
16天前
已完结
Volatile memory characteristics of CMOS-compatible HZO ferroelectric layer for reservoir computing
16天前
已完结
Forming Process in BEOL Oxide Channel Ferroelectric FET
16天前
已完结
Ferroelectric HZO/Al2O3 stacked films with enhanced fatigue resistance for FeFET memory devices
16天前
已完结
Soft-Error Resilient MRAM-OTP BCAM for DDR4 STT-MRAM Redundancy Management
16天前
已完结
A Versatile One-Time-Programmable STT-MRAM for Security-Aware Scenario
16天前
已完结
14-nm FinFET 1.5 Mb Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Differential Current Sensing
16天前
已完结
A Floating Gate and Its Application to Memory Devices
16天前
已完结
A fully decoded 2048-bit electrically programmable FAMOS read-only memory
16天前
已完结
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