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Gate Oxide Failure Mechanisms of SiC MOSFET Related to Electro-Thermomechanical Stress Under HTRB and HTGB Test
2小时前
已完结
Review of HTRB and HTGB Reliability of SiC MOSFETs
2小时前
已完结
Insight Into Mobility Improvement by the Oxidation-Minimizing Process in SiC MOSFETs
1年前
已完结
Advances in Inversion Channel Mobility Model for 4H-SiC MOS Devices
1年前
已完结
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