Lv3
400 积分 2024-09-05 加入
A Survey on Modeling of SiC IGBT
3个月前
已完结
A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications
3个月前
已完结
4H-SiC Super-Junction JFET: Design and Experimental Demonstration
3个月前
已完结
Development of SiC Superjunction MOSFET: A Review
3个月前
已完结
Burn-out failure analysis of SiC MOSFET power device after HTRB
3个月前
已完结
Review of HTRB and HTGB Reliability of SiC MOSFETs
3个月前
已完结
Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics
3个月前
已完结
AnalysisofTransientHTRBLeakageinaSiCFieldRingTermination
3个月前
已完结
Study of Influence of HTGB and HTRB Tests on Parameters of 1200V SiC MOSFETs
3个月前
已完结
Two Mechanisms of Charge Accumulation in Edge Termination of 4H-SiC Diodes Caused by High-Temperature Bias Stress and High-Temperature and High-Humidity Bias Stress
3个月前
已完结