Lv42
450 积分 2026-04-23 加入
Next-Generation Devices Enabled by RF Sputtered Wide Bandgap Semiconductors
5小时前
待确认
Oxygen vacancy control engineering in Ga2O3/4H-SiC Schottky rectifiers
8小时前
已完结
Controlled thin-film deposition of α or β Ga2O3 by ion-beam sputtering
8小时前
已关闭
2 kV β -Ga2O3 Schottky diode with HfO2/SiO2 dual-layer field plate and mesa termination
7天前
已完结