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High performance 4H-SiC MOSFET with deep source trench
1天前
待确认
A Review on Power MOSFET Device Structures
19天前
已关闭
Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs
2个月前
已完结
Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Crystals
3个月前
已关闭
4H–SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode
4个月前
已完结
Combination of Soft X-Ray Microscopy with In-Situ Mechanical Testing to Image Crack Propagation in Microchips
5个月前
已完结
Doping-induced band edge displacements and band gap narrowing in 3C–, 4H–, 6H–SiC, and Si
7个月前
已完结
Electrothermal Analysis of System in Package for Aerospace Application
8个月前
已完结
Simultaneous Influence of Static Load and Temperature on the Electromechanical Signature of Piezoelectric Elements Bonded to Composite Aeronautic Structures
9个月前
已完结
Strain effects on device characteristics: Implementation in drift-diffusion simulators
1年前
已完结
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