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42 积分 2026-04-21 加入
High-transconductance molybdenum disulfide top-gate transistors using epitaxial interface engineering
1个月前
已完结
Steps to integrating 2D transistors into the back-end of line
1个月前
已完结
Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices
1个月前
已完结
Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices
2个月前
已完结
Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices
2个月前
已完结
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
2个月前
已完结
Gate stack engineering of two-dimensional transistors
2个月前
已完结
Electron beam-induced reduction of Schottky barrier width for low contact resistance molybdenum disulfide field-effect transistor
2个月前
已关闭
Electron beam-induced reduction of Schottky barrier width for low contact resistance molybdenum disulfide field-effect transistor
2个月前
已完结
Gate stack engineering of two-dimensional transistors
2个月前
已完结
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