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30 积分 2023-10-29 加入
A First-Principles Mechanistic Study of Thermal Selective Etching of SiGe and Si with Fluorine-Containing Etchants
54分钟前
待确认
面向3纳米以下技术代CMOS器件先导刻蚀工艺及关键技术研究
3个月前
已完结
Atomic layer etching of SiCO films with surface modification by O2 and CF4/NH3/Ar plasmas and desorption by IR annealing
6个月前
已关闭
Atomic layer etching of Si3N4 with high selectivity to SiO2 and poly-Si
6个月前
已完结
Atomic layer etching of SiCO films with surface modification by O2 and CF4/NH3/Ar plasmas and desorption by IR annealing
6个月前
已关闭
Study of precisely controlled selective isotropic quasi-ALE of SiGe
6个月前
已完结
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