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18 积分 2024-07-16 加入
High dielectric constant gate oxides for metal oxide Si transistors
1小时前
已完结
Leakage mechanism in ferroelectric Hf0.5Zr0.5O2 epitaxial thin films
1小时前
已完结
Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping
7天前
已完结
Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping
8天前
已完结
Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films
8天前
已完结
Defect Engineering of HfO 2 -Based Thin Films for Simultaneously Achieving High Polarization and Excellent Fatigue Resistance: Mediating Double-Edged Role of Oxygen Vacancies
8天前
已完结
Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2
10天前
已完结
Modulating the Ferroelectricity of Hafnium Zirconium Oxide Ultrathin Films via Interface Engineering to Control the Oxygen Vacancy Distribution
10天前
已完结
In Situ Modulation of Oxygen Vacancy Concentration in Hf0.5Zr0.5O2−x Thin Films and the Mechanism of Its Impact on Ferroelectricity
22天前
已完结
Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory
1个月前
已完结
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