Lv1
34 积分 2024-07-16 加入
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
1小时前
已完结
Robust Sb 2 Se 3 /Hafnium Zirconium Oxide Synaptic Memristors with Dynamic Learning Rate Strategy for Generalizable Neuromorphic Networks
19天前
已完结
Origin of La Doping-Induced Endurance Improvement and Wake-up Effect Reduction in Ferroelectric HfO2 Thin Films
20天前
已完结
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
24天前
已完结
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
26天前
已完结
Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film
26天前
已完结
Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy
28天前
已完结
Practical guide for inelastic mean free paths, effective attenuation lengths, mean escape depths, and information depths in x-ray photoelectron spectroscopy
28天前
已完结
Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology
30天前
已完结
Lorentz-Tail Engineering Toward Over 10-Year Data Retention with Minimum Loss in Ferroelectric HZO
30天前
已完结
皖公网安备34019202002308
