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10 积分 2025-03-11 加入
Short-Circuit Capability with GaN HEMTs : Invited
4小时前
已完结
Suppressed gate leakage and enlarged gate over-drive window of E-mode p-GaN gate double channel HEMTs
4小时前
待确认
An Investigation into the Causes of C OSS Losses in GaN-on-Si HEMTs
4小时前
已完结
Ultra‐wide bandgap Al 0. 1 Ga 0 . 9 N double channel HEMT for RF applications
4小时前
已完结
Conductivity Enhancement Induced by Confined Vicinal Hole Storage in Enhancement-mode $p$-GaN Gate Double-Channel HEMTs
1个月前
已完结
Electroluminescence and Gate Carrier Dynamics in a Schottky-Type p-GaN Gate Double-Channel GaN HEMT
1个月前
已完结
An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss
1个月前
已完结
Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor
1个月前
已完结
Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation
1个月前
已完结
Conductivity Enhancement Induced by Confined Vicinal Hole Storage in Enhancement-mode $p$-GaN Gate Double-Channel HEMTs
1个月前
已完结
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