Lv5
828 积分 2025-03-11 加入
Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures
26天前
已完结
Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition
26天前
已完结
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
1个月前
已完结
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess
1个月前
已完结
Temperature-dependent characteristics and mechanisms in thin-barrier AlGaN/GaN MIS-HEMTs with LPCVD-SiN passivation layer
1个月前
已完结
Stress modulation of 2DEG concentration in thin-barrier AlGaN/GaN HEMT on Si substrate via LPCVD SiN: Experiment and simulation
1个月前
已完结
High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts
1个月前
已完结
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
1个月前
已完结
Compatibility of AlN/SiNxPassivation With LPCVD-SiNxGate Dielectric in GaN-Based MIS-HEMT
1个月前
已完结
AlGaN/GaN HEMT with LPCVD deposited SiN and PECVD deposited SiCOH low-k passivation
1个月前
已完结
皖公网安备34019202002308
