Lv4
450 积分 2025-03-11 加入
Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state
29天前
已完结
Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review
29天前
已完结
A Hybrid-Source Double-Channel p-GaN Gate AlGaN/GaN HEMT Featuring Suppression of Buffer Trapping Effects on Both Forward and Reverse Conductions
29天前
已完结
Enhanced Photon-Generated Hole Spreading in p-GaN Gate Double-Channel HEMT for Suppression of Back-Gating Effect from Si Substrate
29天前
已完结
Dual-Channel SiC-AlGaN/GaN HEMT with a Drain-Connected Field Plate for Improved Breakdown Voltage and Analog/RF Performance
29天前
已完结
Polarization Enhanced GaN Complementary Logic Circuits with Short Propagation Delay
4个月前
已完结
Enhanced Photon-Generated Hole Spreading in p-GaN Gate Double-Channel HEMT for Suppression of Back-Gating Effect from Si Substrate
5个月前
已完结
Suppressed gate leakage and enlarged gate over-drive window of E-mode p-GaN gate double channel HEMTs
5个月前
已关闭
Suppressed gate leakage and enlarged gate over-drive window of E-mode p-GaN gate double channel HEMTs
5个月前
已完结
Improved Graded Barrier/Buffer Double-Channel GaN HEMT for High-Power RF Applications
5个月前
已完结
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