Lv1
80 积分 2024-07-11 加入
Evaluation of MoO₂Cl₂ Vapor Pressure and Its Surface Reactions: Implications for Advanced Thin Film Deposition
4个月前
已关闭
Study on the Deposition Characteristics of Molybdenum Thin Films Deposited by the Thermal Atomic Layer Deposition Method Using MoO2Cl2 as a Precursor
4个月前
已完结
Properties of low-resistivity molybdenum metal thin film deposited by atomic layer deposition using MoO2Cl2 as precursor
4个月前
已完结
An ion-gating synaptic memristor based on tri-layer HfOx composition regulation
7个月前
已完结
Improved Threshold Voltage Stability and Gate Reliability in p‐GaN Gate High‐Electron‐Mobility Transistors with Hydrogen Plasma Treatment on the Sidewalls
7个月前
已完结
Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review
7个月前
已关闭
皖公网安备34019202002308
