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490 积分 2023-06-06 加入
P‐2: A Novel Method for LTPS Model Extraction with Hysteresis and Transient Current Analysis
4个月前
已完结
Modeling of Threshold Voltage Hysteresis in SiC MOSFET Device
4个月前
已完结
Impact of Interface Trap Distribution on the Performance of LTPS TFT
4个月前
已完结
1.06-kV Polarization Gate-Assisted Si-Based AlGaN/GaN Schottky Barrier Diode With 0.817-GW/cm 2 BFOM and 10 –5 -A/cm 2 Leakage Current
6个月前
已完结
1.06-kV Polarization Gate-Assisted Si-Based AlGaN/GaN Schottky Barrier Diode With 0.817-GW/cm 2 BFOM and 10 –5 -A/cm 2 Leakage Current
6个月前
已完结
Ultra-low leakage current recess-free thin barrier AlGaN/GaN Schottky diodes featuring hybrid MOS/MIS GET anodes with optimized MOS-gate length and LPCVD SiNx thickness
1年前
已完结
Ultra-low leakage current recess-free thin barrier AlGaN/GaN Schottky diodes featuring hybrid MOS/MIS GET anodes with optimized MOS-gate length and LPCVD SiNx thickness
1年前
已完结
Enhancement Mode N-polar Deep Recess GaN HEMT with Record Small Signal Performance
1年前
已完结
1.43 kV GaN-based MIS Schottky barrier diodes
1年前
已完结
Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2
1年前
已完结
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