Lv4
490 积分 2023-06-06 加入
P‐2: A Novel Method for LTPS Model Extraction with Hysteresis and Transient Current Analysis
1个月前
已完结
Modeling of Threshold Voltage Hysteresis in SiC MOSFET Device
1个月前
已完结
Impact of Interface Trap Distribution on the Performance of LTPS TFT
1个月前
已完结
1.06-kV Polarization Gate-Assisted Si-Based AlGaN/GaN Schottky Barrier Diode With 0.817-GW/cm 2 BFOM and 10 –5 -A/cm 2 Leakage Current
3个月前
已完结
1.06-kV Polarization Gate-Assisted Si-Based AlGaN/GaN Schottky Barrier Diode With 0.817-GW/cm 2 BFOM and 10 –5 -A/cm 2 Leakage Current
3个月前
已完结
Ultra-low leakage current recess-free thin barrier AlGaN/GaN Schottky diodes featuring hybrid MOS/MIS GET anodes with optimized MOS-gate length and LPCVD SiNx thickness
9个月前
已完结
Ultra-low leakage current recess-free thin barrier AlGaN/GaN Schottky diodes featuring hybrid MOS/MIS GET anodes with optimized MOS-gate length and LPCVD SiNx thickness
9个月前
已完结
Enhancement Mode N-polar Deep Recess GaN HEMT with Record Small Signal Performance
9个月前
已完结
1.43 kV GaN-based MIS Schottky barrier diodes
11个月前
已完结
Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2
11个月前
已完结
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