Lv11
30 积分 2023-06-06 加入
Advantage of SiO2 Intermediate Layer on the Electron Injection for Ti/n-Al0.60Ga0.40N Structure
4小时前
待确认
Investigation of an AlGaN-channel Schottky barrier diode on a silicon substrate with a molybdenum anode
2个月前
已完结
kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation
2个月前
已完结
Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV
3个月前
已完结
Carrier transport in a position sensitive detector based on an ITO/a-Si:H/Pd structure
3个月前
已完结
On the coupled effect of MIS-based anode and AlGaN-polarized super-junction to reduce local electric field for AlGaN/GaN Schottky barrier diodes
4个月前
已完结
Interface states modulation in Pt/Graphene/GaN Schottky barrier diodes
5个月前
已完结
High electron mobility in AlN:Si by point and extended defect management
6个月前
已完结
Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor
6个月前
已完结
AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al0.9Ga0.1N current spreading layer
6个月前
已完结
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