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30 积分 2023-06-06 加入
1.06-kV Polarization Gate-Assisted Si-Based AlGaN/GaN Schottky Barrier Diode With 0.817-GW/cm 2 BFOM and 10 –5 -A/cm 2 Leakage Current
28天前
已完结
1.06-kV Polarization Gate-Assisted Si-Based AlGaN/GaN Schottky Barrier Diode With 0.817-GW/cm 2 BFOM and 10 –5 -A/cm 2 Leakage Current
1个月前
已完结
Ultra-low leakage current recess-free thin barrier AlGaN/GaN Schottky diodes featuring hybrid MOS/MIS GET anodes with optimized MOS-gate length and LPCVD SiNx thickness
6个月前
已完结
Ultra-low leakage current recess-free thin barrier AlGaN/GaN Schottky diodes featuring hybrid MOS/MIS GET anodes with optimized MOS-gate length and LPCVD SiNx thickness
7个月前
已完结
Enhancement Mode N-polar Deep Recess GaN HEMT with Record Small Signal Performance
7个月前
已完结
1.43 kV GaN-based MIS Schottky barrier diodes
8个月前
已完结
Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2
8个月前
已完结
1.43 kV GaN-based MIS Schottky barrier diodes
8个月前
已完结
A body-tied FinFET (OMEGA MOSFET) using bulk Si wafer
8个月前
已关闭
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