Lv11
40 积分 2024-01-10 加入
In situ dry repair and passivation unlocks size-independent performance in Ⅲ-nitride micro-LEDs
6小时前
待确认
High-Power InGaN-Based LED With Tunneling-Junction-Induced Two-Dimensional Electron Gas at AlGaN/GaN Heterostructure
19天前
已完结
Enhanced Output Power of InGaN-Based Light-Emitting Diodes With AlGaN/GaN Two-Dimensional Electron Gas Structure
19天前
已完结
GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition
19天前
已完结
GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions
3个月前
已完结
All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions
3个月前
已完结
Advanced Optical Properties of InGaN/GaN LED Structures Affected by Large V-Pits
4个月前
已完结
Three-Dimensional Characterization of V-Shaped Pits in GaN-Based LEDs Using Time-of-Flight Secondary Ion Mass Spectrometry
4个月前
已完结
Advanced Optical Properties of InGaN/GaN LED Structures Affected by Large V-Pits
4个月前
已完结
Hydrogen etching on the surface of GaN for producing patterned structures
5个月前
已完结
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