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94 积分 2024-01-10 加入
III-nitride-based monolithic integration: From electronics to photonics
22天前
已完结
Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs
28天前
已完结
Boosting Performance of AlGaN-Based Ultraviolet-C Light-Emitting Diodes via High-Quality AlN Template
28天前
已完结
Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth
2个月前
已完结
The controlled growth of GaN microrods on Si(111) substrates by MOCVD
3个月前
已完结
Miniature InGaN-based LEDs operating at a wavelength of 672 nm with an external quantum efficiency of 9.1% fabricated on a GaN template layer
3个月前
已完结
Fabrication of InGaN/GaN multi quantum well based nano-LEDs by hydrogen environment anisotropic thermal etching (HEATE) technique
3个月前
已完结
Manipulating precursors of group-III nitrides for high-Al-content p-AlGaN toward efficient deep ultraviolet light emitters
3个月前
已完结
Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type
3个月前
已完结
Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes
3个月前
已完结
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