Lv1
18 积分 2024-03-12 加入
Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1–xHfxO2 Thin Film without Using Noble Metal Electrode
1个月前
已完结
Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films
3个月前
已完结
Composition optimization of HfxZr1-xO2 thin films to achieve the morphotrophic phase boundary for high-k dielectrics
3个月前
已完结
Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer
3个月前
已完结
High-κ Hf0.3Zr0.7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose
3个月前
已完结
Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films
3个月前
已完结
Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors
3个月前
已完结
Investigating the effects of etching systems and low-temperature thermal processing on hafnium zirconium oxide thin film properties
3个月前
已完结
Morphotropic Phase Boundary of Hf1-xZrxO2 Thin Films for Dynamic Random Access Memories
4个月前
已完结
Modeling of thermal stresses in elastic multilayer coating systems
4个月前
已完结
皖公网安备34019202002308
