Lv3
304 积分 2025-04-23 加入
Study of dislocations in 4H-SiC substrate by fused alkali etching of 4H-SiC homogeneous epitaxy
1个月前
已完结
Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial Layers
1个月前
已完结
Study on the mechanism of dislocation-induced particle aggregation in 4H-SiC single crystal substrates
1个月前
已完结
Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films
5个月前
已完结
Characterization of horseshoe-shaped defects in 4H-SiC thick homoepitaxial layers
5个月前
已完结
Control of the temperature field by double induction coils for growth of large-sized SiC single crystals via the physical vapor transport technique
5个月前
已完结
The etching behaviour of dislocations in N-doped 4H-SiC substrate
5个月前
已完结
Comparative Study of AlN Crystals Grown on SiC Seeds with/without Voids at the Heterointerface
5个月前
已完结
Wafer-Scale p-Type SiC Single Crystals with High Crystalline Quality
5个月前
已完结
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