Lv1
50 积分 2024-05-15 加入
Investigation of refresh characteristics in 4F 2 vertical DRAM cells for sub-10 nm era
3个月前
已关闭
New bending mode in SAQP Si fins and its mitigation
3个月前
已完结
Adhesion and Elastic Energy Analysis of Pattern Collapse in Surface-Modified FinFET Structures
8个月前
已完结
New bending mode in SAQP Si fins and its mitigation
8个月前
已完结
SiP Epitaxial Growth for DRAM Bit Contact
8个月前
已完结
Comparative Analysis of MOSFET, FINFET and GAAFET Devices Using Different Substrate and Gate Oxide Materials
8个月前
已完结
PMOS Rc reduction using B2H6 plasma doping process and advanced anneals for the current and next-gen DRAM devices
8个月前
已完结
Approach to reducing oversaturated boron content in plate poly layer of DRAM
8个月前
已完结
Dielectric pocket engineered, gate induced drain leakages (GIDL) and analog performance analysis of dual metal nanowire ferroelectric MOSFET (DPE-DM-NW-Fe FET) as an inverter
9个月前
已完结
Disrupting the DRAM roadmap with capacitor-less IGZO-DRAM technology
9个月前
已完结
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