Lv51
1360 积分 2025-07-28 加入
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD
6小时前
已关闭
Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates
6小时前
待确认
Growth and characterization of GaN layers on SiC substrates
6小时前
已关闭
The influence of mask area ratio on GaN regrowth by epitaxial lateral overgrowth
25天前
已完结
Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template
25天前
已完结
Regrowth of High Quality Heavily Si-Doped nGaN Utilizing Nano-Rod GaN Template
25天前
已完结
Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN∕ GaN heterostructures
26天前
已完结
200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration
7个月前
已关闭
Micro-LED Displays: Key Manufacturing Challenges and Solutions
8个月前
已完结
Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate
8个月前
已完结