Lv5
950 积分 2025-07-28 加入
200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration
1个月前
已关闭
Micro-LED Displays: Key Manufacturing Challenges and Solutions
2个月前
已完结
Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate
2个月前
已完结
Maskless regrowth of GaN for trenched devices by MOCVD
3个月前
已完结
Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application
3个月前
已完结
Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs
4个月前
已完结
The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer
4个月前
已完结
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