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0 积分 2026-04-27 加入
Wafer-scale crack-free 10 µm-thick GaN with a dislocation density of 5.8 × 107 cm−2 grown on Si
8小时前
已完结
Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy
5天前
已完结
Recent advances in defect-selective etching of GaN
5天前
已完结
Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching
1个月前
已完结
Luminescence and Crystalline Properties of InGaN-based LED on Si Substrate with AlN/GaN Superlattice Structure
2个月前
已完结
Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates
3个月前
已完结
Mosaic structure in epitaxial thin films having large lattice mismatch
3个月前
已完结
Low threading dislocation density in GaN films grown on patterned sapphire substrates
3个月前
已关闭
Perspective on light-fidelity and visible light communication
4个月前
已完结
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