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40 积分 2024-11-12 加入
“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs
11小时前
待确认
Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs
12小时前
已完结
漏压对P-GaN HEMT导通电阻和阈值电压的影响
10天前
已完结
Band alignment at β -Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations
2个月前
已完结
On the Identification of Buffer Trapping for Bias-Dependent Dynamic RONof AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier
3个月前
已完结
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
3个月前
已完结
Iron and intrinsic deep level states in Ga2O3
3个月前
已完结
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
3个月前
已完结
High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications
4个月前
已完结
AlGaN-GaN Double-Channel HEMTs
4个月前
已完结
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