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10 积分 2024-11-12 加入
Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
13天前
已完结
Band alignment at β -Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations
13天前
已完结
Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
13天前
已完结
The dawn of Ga2O3 HEMTs for high power electronics - A review
13天前
已完结
Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier
21天前
已完结
Breakdown mechanisms in AlGaN/GaN HEMTs: An overview
1个月前
已完结
Analyzing the Electrical Characteristics of P-gate Enhanced HEMT with C-doped Buffer Layer through Silvaco
1个月前
已完结
A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications*
1个月前
已完结
Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications
1个月前
已完结
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1个月前
已完结
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