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30 积分 2024-11-12 加入
Band alignment at β -Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations
23天前
已完结
On the Identification of Buffer Trapping for Bias-Dependent Dynamic RONof AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier
1个月前
已完结
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
1个月前
已完结
Iron and intrinsic deep level states in Ga2O3
1个月前
已完结
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
1个月前
已完结
High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications
2个月前
已完结
AlGaN-GaN Double-Channel HEMTs
2个月前
已完结
Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs
2个月前
已完结
High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study
2个月前
已完结
Impact ionization in β-Ga2O3
3个月前
已完结
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