Lv1
10 积分 2025-05-26 加入
Semimetal-in-oxide design for tellurium-based p-type oxide electronics
16天前
已完结
Happy birthday, Nature Reviews Electrical Engineering
16天前
已关闭
Barrier height control in metal/silicon contacts with atomically thin MoS 2 and WS 2 interfacial layers
4个月前
已完结
Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts
4个月前
已完结
Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts
4个月前
已关闭
2D MoTe2 CMOS Circuits and Photodiodes by Contact Engineering
4个月前
已完结
2D WSe2/MoS2 p‐i‐n Vertical Heterojunction Photodetectors by Selective Plasma Doping
5个月前
已完结
High‐Gain Integrated Complementary Inverters Using Doping‐Free MoTe2 Transistors
5个月前
已完结
Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors
6个月前
已完结
Field-effect transistors made from solution-grown two-dimensional tellurene
8个月前
已完结
皖公网安备34019202002308
