Lv5
906 积分 2023-07-16 加入
Design and Development of p-GaN Gate HEMT with Schottky Source Extension for Improved Short-Circuit Reliability
6个月前
已完结
The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs
6个月前
已完结
Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness
6个月前
已完结
Total-Ionizing-Dose Radiation Induced Gate Damage in High Voltage P-GaN Gate HEMTs
6个月前
已完结
Processes of p-GaN Gate HEMTs for High-efficiency and High-reliability Applications
6个月前
已完结
An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps
7个月前
已完结
Processes of p-GaN Gate HEMTs for High-efficiency and High-reliability Applications
7个月前
已完结
Band offset and leakage current in fluorine doped Si/HfO2/SiO2 gate stack of metal oxide semiconductor field effect transistors: An ab initio investigation
7个月前
已完结
Performance Assessments of Gate Engineered Dopingless Schottky Tunnel MOSFET in Presence of Interfacial Trap Charges
7个月前
已完结
RETRACTED ARTICLE: Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials
7个月前
已完结
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