Lv4
736 积分 2023-07-16 加入
Hardened design and practical effect of 60 V trench MOSFET resistant to irradiation
1个月前
已完结
SEGR Analysis of Super Junction VDMOS using HfO2 as Gate Dielectric
1个月前
已完结
Analysis and Mitigation of Single-Event Gate Rupture in VDMOS With Termination Structure
1个月前
已完结
Design and Optimisation of Gate Stack Structures for High-Performance SiC Power Devices
1个月前
已完结
Total Ionizing Dose Hardening of Planar SOI MOSFET Through an Optimal Design Combining Embedded Void and H-Gate Structures
1个月前
已完结
Demonstration of 650 V SiC Semi-Superjuncion Trench Gate MOSFET Based on Channeling Implantation and Epitaxial Process
3个月前
已完结
Periodically Grounded Trench Bottom Shielding in SiC Trench MOSFET for Enhanced Single-Event Gate Oxide Damage Hardness
3个月前
已完结
Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment
3个月前
已完结
Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation
3个月前
已完结
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