| 标题 |
Improving Single-Event Effect Performance of SiC MOSFET by Excess Hole Extraction |
| 网址 | |
| DOI | |
| 其它 |
期刊:IEEE Transactions on Device and Materials Reliability 作者:Shiwei Liang; Yu Yang; Jiaqi Chen; Lei Shu; Liang Wang; et al 出版日期:2024-12-01 |
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(2025-6-4)