| 标题 |
A 4H-SiC MOSFET Integrated Trench Diode to Enhance Single-Event Effect Robustness |
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| 其它 |
期刊:2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 作者:Yadong Huang; Yiru He; Maojiu Luo; Bo Zhang; Yourun Zhang 出版日期:2026-05-24 |
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(2025-6-4)