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40 积分 2026-05-11 加入
Defect engineering in NiO/β-Ga2O3 p-n heterojunction diodes via post-deposition annealing for power electronics
10分钟前
待确认
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
3个月前
已完结
Superlattice-like Ge2Sb2Te5/Sb2S3 based phase-change memory enabling linear conductance modulation for neuromorphic computing
5个月前
已关闭
Memory devices and applications for in-memory computing
5个月前
已完结
Tutorial: Basics of Non-Volatile Memories: MRAM, RRAM, and PRAM
6个月前
已关闭
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