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50 积分 2026-05-11 加入
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
2天前
已完结
Superlattice-like Ge2Sb2Te5/Sb2S3 based phase-change memory enabling linear conductance modulation for neuromorphic computing
2个月前
已关闭
Memory devices and applications for in-memory computing
2个月前
已完结
Tutorial: Basics of Non-Volatile Memories: MRAM, RRAM, and PRAM
2个月前
已关闭
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