Lv7
5000 积分 2023-02-26 加入
Induction frequency modulation for 4H-SiC growth: Thermal field evolution, dislocation suppression, and high-quality crystal preparation via PVT method
29天前
已完结
Enhancement of edge quality in SiC single crystals via flow field control with multi-zone graphite rings
1个月前
已完结
The dissociation modes of threading screw dislocations in 4H-SiC
2个月前
已完结
High-resolution characterization of nitrogen doping concentration uniformity in n-type 4H-SiC wafers based on near-ultraviolet photoluminescence
3个月前
已完结
Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels
3个月前
已完结
First-principles studies of nitrogen doping in 4H-SiC
3个月前
已完结
Electrically driven single-photon source at room temperature in diamond
3个月前
已完结
Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
3个月前
已完结
First-principles calculation on the concentration of intrinsic defects in 4H-SiC
3个月前
已完结
Energetics and kinetics of vacancy defects in 4H -SiC
3个月前
已完结
皖公网安备34019202002308
