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4440 积分 2023-02-26 加入
Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC
7天前
已完结
Nitrogen donors in 4H-silicon carbide
7天前
已完结
Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
7天前
已完结
Nitrogen donors in 4H-silicon carbide
8天前
已完结
On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
8天前
已完结
Defect-Induced Luminescence Quenching of 4H-SiC Single Crystal Grown by PVT Method through a Control of Incorporated Impurity Concentration
16天前
已完结
Optical Studies of Deep Centers in Semi-Insulating SiC
17天前
已完结
Optical properties of 4H-SiC and 6H-SiC from infrared to vacuum ultraviolet spectral range ellipsometry (0.05–8.5 eV)
17天前
已完结
Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å
17天前
已完结
Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching
2个月前
已完结
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