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40 积分 2026-01-06 加入
Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs
2个月前
已关闭
Improved dual-channel 4H-SiC MESFETs with high doped n-type surface layers and step-gate structure
2个月前
已关闭
Improved dual-channel 4H-SiC MESFETs with high doped n-type surface layers and step-gate structure
2个月前
已完结
Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel
2个月前
已完结
Low $R_{\text{ON}}Q_\mathrm{G}$ 1.2 kV-Class Normally-Off GaN Gate Injection Transistor on GaN Substrate with Asymmetric Gate Structure
2个月前
已完结
Low $R_{\text{ON}}Q_\mathrm{G}$ 1.2 kV-Class Normally-Off GaN Gate Injection Transistor on GaN Substrate with Asymmetric Gate Structure
2个月前
已关闭
Qualitative Analysis & Advancement of Asymmetric Recessed Gates with Dual Floating Material GaN HEMT for Quantum Electronics
2个月前
已关闭
A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance
2个月前
已完结
Achieving a Considerable Output Power Density in SOI MESFETs Using Silicon Dioxide Engineering
6个月前
已完结
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