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20 积分 2026-01-06 加入
Achieving a Considerable Output Power Density in SOI MESFETs Using Silicon Dioxide Engineering
19小时前
已完结
A novel stair-stepping buffer-gate 4H-SiC MESFET with multiple recesses in a buffer layer
1天前
已完结
Novel 4H-SiC MESFET with amended minimum noise figure for high-frequency applications
1天前
已完结
Improved 4H-SiC MESFET with Partially Undoped Region and Tortuous Channel
1天前
已完结
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