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54 积分 2025-07-13 加入
Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials
1天前
已完结
Strain- and kinetically induced suppression of phase separation in MBE-grown metastable and unstable GaInAsSb quaternary alloys for mid-infrared optoelectronics
1天前
已完结
Growth of InGaAsSb layers in the miscibility gap: Use of very-low-energy ion irradiation to reduce alloy decomposition
23天前
已完结
Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials
1个月前
已关闭
Electrical and optical characterisation of InGaAsSb-based photodetectors for SWIR applications
1个月前
已完结
New High-Performance GaSb-Based Thermophtovolatic Devices. Final Report
1个月前
已完结
Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InP
1个月前
已关闭
Type II heterojunctions in the GaInAsSb/GaSb system
1个月前
已完结
Quaternary InGaAsSb Thermophotovoltaic Diodes
1个月前
已完结
Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing
1个月前
已完结
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