Lv6
2020 积分 2024-08-07 加入
C4F6 Etching Characteristics for High‐Aspect‐Ratio Etching of SiO2 Films Using an Inductively Coupled Plasma Etching System With Low‐Frequency Bias Power
7个月前
已完结
Plasma simulation of HF plasma generated in dual-frequency chamber for high aspect ratio dielectric etching
7个月前
已完结
Future of plasma etching for microelectronics: Challenges and opportunities
7个月前
已完结
皖公网安备34019202002308
