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240 积分 2024-11-07 加入
Competitive surface adsorption governs unintentional Si incorporation in MOCVD-grown β -Ga 2 O 3 (001) homoepilayers
11天前
已完结
Homoepitaxial growth of (100) Si-doped β -Ga 2 O 3 films via MOCVD using TMGa: effects of growth temperature and oxygen flow rate
15天前
已完结
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3
15天前
已完结
Metalorganic chemical vapor deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates
15天前
已完结
Kinetics of charge carrier recombination in beta-Ga2O3 single crystals (Conference Presentation)
1个月前
已关闭
Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga2O3 with neutron irradiation and forming gas anneals
1个月前
已完结
4.1/3.5 kV breakdown voltage in depletion/enhancement-mode MOCVD-grown Ga 2 O 3 MOSFETs on sapphire substrates
1个月前
已完结
Metalorganic chemical vapor deposition epitaxy of β-Ga2O3 films on (001) Ga2O3 substrates with fast growth rates
1个月前
已完结
A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties
2个月前
已完结
Competitive surface adsorption governs unintentional Si incorporation in MOCVD-grown β -Ga 2 O 3 (001) homoepilayers
2个月前
已完结
Investigation on Characteristics of 3–5 μm Mid-Infrared Optical Parametric Amplification in LiInS2
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