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38 积分 2026-02-02 加入
Composition optimization of HfxZr1-xO2 thin films to achieve the morphotrophic phase boundary for high-k dielectrics
2个月前
已完结
On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory
2个月前
已完结
Cramming More Components Onto Integrated Circuits
2个月前
已完结
Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation
2个月前
已完结
High-K dielectrics for the gate stack
2个月前
已完结
Invariant polarization switching kinetics in an (Al0.8Sc0.2)N film with frequency and temperature
2个月前
已完结
Atomic-scale polarization switching in wurtzite ferroelectrics
2个月前
已完结
Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric
4个月前
已完结
Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy
5个月前
已完结
Ferroelectricity Engineered AlScN Thin Films Prepared by Hydrogen Included Reactive Sputtering for Analog Applications
5个月前
已完结
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