Lv1
38 积分 2026-02-02 加入
Composition optimization of HfxZr1-xO2 thin films to achieve the morphotrophic phase boundary for high-k dielectrics
15天前
已完结
On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory
15天前
已完结
Cramming More Components Onto Integrated Circuits
17天前
已完结
Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation
17天前
已完结
High-K dielectrics for the gate stack
29天前
已完结
Invariant polarization switching kinetics in an (Al0.8Sc0.2)N film with frequency and temperature
1个月前
已完结
Atomic-scale polarization switching in wurtzite ferroelectrics
1个月前
已完结
Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric
2个月前
已完结
Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy
3个月前
已完结
Ferroelectricity Engineered AlScN Thin Films Prepared by Hydrogen Included Reactive Sputtering for Analog Applications
3个月前
已完结
皖公网安备34019202002308
