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30 积分 2025-09-17 加入
A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance
3个月前
已完结
Characteristics of initial tool influence function on cordierite substrates
6个月前
已完结
Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences
6个月前
已完结
Gate Length Dependence of Bias Temperature Instabilities up to 400 °C in 4H-SiC CMOS Devices
6个月前
已完结
Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO 2 interfaces
6个月前
已完结
A 4H-SiC CMOS Oscillator-Based Temperature Sensor Operating from 298 K up to 573 K
7个月前
已完结
Design, Process, and Characterization of Complementary Metal–Oxide–Semiconductor Circuits and Six-Transistor Static Random-Access Memory in 4H-SiC
7个月前
已完结
Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces
9个月前
已完结
High-resolution elemental profiles of the silicon dioxide∕4H-silicon carbide interface
9个月前
已完结
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