Lv1
48 积分 2025-10-15 加入
The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor
10天前
已完结
Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
10天前
已完结
Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
13天前
已完结
Hydrogen-Induced Resistive Switching in TiN/ALD HfO2/PEALD TiN RRAM Device
13天前
已完结
Ultrathin WOx interfacial layer improving the ferroelectricity and endurance of Hf0.5Zr0.5O2 thin films on polyimide
15天前
已完结
Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films With Exceptional Endurance Enabled by Oxygen-Engineered Nanolaminates
16天前
已完结
Excellent Ferroelectricity in 6-nm HZO With Sub-5-nm Nb Electrodes and Nb2O5 Interface Engineering at Low-Thermal Budget of 300 °C
16天前
已完结
Unveiling Ferroelectric HZO Cryogenic Performance (4-300 K): Kinetic Barrier Engineering and Underlying Mechanism
4个月前
已完结
Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics
4个月前
已关闭
皖公网安备34019202002308
