Lv41
650 积分 2023-12-02 加入
Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer
5小时前
求助中
Implementation of machine learning for high-volume manufacturing metrology challenges (Conference Presentation)
16天前
已完结
Formation mechanism of dislocation half-loop array in 4H-SiC epitaxial layers: effect of triangular defects
25天前
已完结
Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing
25天前
已完结
Impurities and defects in 4H silicon carbide
26天前
已完结
Experimental Determination of the Dipole Orientation of Single Color Centers in Silicon Carbide
26天前
已完结
Feature selection of Raman spectra for forensic document examination using machine learning
1个月前
已完结
Evaluation of Defects in a SiC Substrate Using the Photoluminescence Measurement Method
2个月前
已完结
Raman analysis of defects in n-type 4H-SiC
2个月前
已完结
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
2个月前
已完结
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