Lv2
190 积分 2024-11-28 加入
Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation
14天前
已完结
Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy
17天前
已完结
Carbon and silicon background impurity control in undoped GaN layers grown with trimethylgallium and triethylgallium via metalorganic chemical vapor deposition
2个月前
已完结
Interfacial engineering for semi-insulating GaN/sapphire template with low dislocation density
2个月前
已完结
Investigation of surface defect structure originating in dislocations in AlGaN/GaN epitaxial layer grown on a Si substrate
8个月前
已完结
Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse
8个月前
已完结
Comparison of performance in GaN-HEMTs on thin SiC substrate and Sapphire substrates
9个月前
已完结
A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors
9个月前
已完结
GaN HEMT with AlGaN back barrier for high power MMIC switch application
9个月前
已完结
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design
9个月前
已完结