Lv4
550 积分 2026-01-12 加入
Interfacial stress concentration and dislocation generation within 4H-SiC driven by carbon inclusions: insights from experimental and molecular dynamics
1个月前
已完结
Mechanism of Polytype Transformation and Related Defect Formation Induced by Carbon Inclusions in 4H‐SiC Crystal
1个月前
已完结
Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field
1个月前
已完结
Multilayer nucleation at step walls: a low-barrier pathway for polytype control in SiC crystal growth
2个月前
已完结
Multilayer nucleation at step walls: a low-barrier pathway for polytype control in SiC crystal growth
2个月前
已关闭
Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films
3个月前
已完结