Lv21
180 积分 2025-02-07 加入
Transferred Graphene Monolayer to β-Ga2O3 as a Diffusion Barrier for Base Power Device Applications
3小时前
已完结
High-performance tin oxide field-effect transistors deposited by thermal atomic layer deposition
3天前
求助中
Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate
3天前
已完结
SnO/β-Ga2O3 heterojunction barrier Schottky diodes for depressed reverse leakage current and improved breakdown voltage
4天前
已完结
Formation of Ni Schottky contact and quasi-vertical Schottky barrier diode on SnO2 thin film
4天前
已完结
Enhancing Ni/Cr/n-GaN schottky junction performance using a novel Bi2O3 insulating layer for advanced optoelectronic device applications
11天前
已关闭
Strain-induced polarization modulation at GaN/Ti interface for flexible thin-film sensor
11天前
已完结
700 V breakdown vertical diamond Schottky rectifier with power figure of merit 30.5 MW·cm−2
13天前
已关闭
High breakdown electric field diamond Schottky barrier diode with HfO2 field plate
13天前
已完结
Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode
14天前
已完结
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