Lv3
230 积分 2024-07-30 加入
Dynamic on-resistance degradation mechanism of 1200 V enhancement-mode GaN Schottky-gate HEMT devices on the Si substrates
4小时前
已完结
Effect of ALD temperature on hydroxyl and performance in Al 2 O 3 -based CBRAM
4小时前
求助中
Hybrid integrated two-dimensional materials for high-speed optoelectronic devices
4小时前
求助中
Porous Ga 2 O 3 and defect selective etching via electrochemical path
4小时前
求助中
3-STAR: A Super-steep switching, Stackable, and Strongly Reliable Transistor Array RAM for Sub-10nm DRAM and beyond
21天前
已完结
Analysis of Grain Boundary Effects Based on Location in a Diode-Type NAND Flash Memory Cell
1个月前
已完结
Comparative Analysis of Grain Boundary Effects in FET-Type and Diode-Type 3-D nand flash memory
1个月前
已完结
Zernike model for overlay control and tool monitor for lithography and etch process
2个月前
已完结
Bandgap Engineering with Carriers Blocking in Long-wavelength Infrared Photodiodes
2个月前
已完结
Novel FOM-enhanced sided-shield gate trench MOSFET with super-junction structure
2个月前
已完结
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