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70 积分 2024-03-17 加入
Ultrathin sub-5 nm gate-all-around SiGe nanowire transistors with near-ideal subthreshold swing
10小时前
待确认
Single-layerHfN2: Symmetric Scaling Behavior in CMOS Transistors
1个月前
已完结
Sub-5 nm monolayer SnNX (X = Cl, Br)-based homogeneous CMOS devices
1个月前
已完结
Impact of Material Variations on Gate-All-Around Nanowire FETs for Low-Power Applications
4个月前
已完结
Symmetric high-performance transport inn- andp-typeHfSnS3 nanowire gate-all-around transistors toward sub-5-nm electronics
4个月前
已完结
Ab inito Quantum Transport Simulation of the Sub-1 nm Gate-length Monolayer and Bilayer α-MoTe2 Field-Effect Transistors
5个月前
已关闭
Tellurium nanowire retinal nanoprosthesis improves vision in models of blindness
6个月前
已完结
Tunable electronic and optoelectronic characteristics of two-dimensional β-AsP monolayer: A first-principles study
6个月前
已完结
Two-dimensional XYN3 (X=V, Nb, Ta; Y=Si, Ge): promising optoelectronic materials in photovoltaic photodetectors
6个月前
已关闭
Edge modified zigzag GeS nanoribbon devices with tunable electronic properties and significant negative differential resistance effect: A first principle study
6个月前
已完结
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