Lv22
150 积分 2026-02-04 加入
Influence of strain and initial reactions on epitaxial SiGe growth
1个月前
已完结
Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations
1个月前
已完结
Trench filling with phosphorus-doped monocrystalline and polycrystalline silicon
1个月前
已完结
HCl + GeH4 etching for the low temperature cyclic deposition/etch of Si, Si:P, tensile-Si:P and SiGe(:B)
1个月前
已完结
Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers
4个月前
已完结
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