Lv11
50 积分 2022-10-21 加入
Geometrical effects in JTE rings termination for 4H-SiC medium-voltage devices
5天前
已完结
Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET
12天前
已完结
A Review of Superjunction Vertical Diffused MOSFET
13天前
已完结
Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth
13天前
已完结
Theory of 3-D Superjunction MOSFET
14天前
已完结
Optimum Design of Asymmetric 4H-SiC Superjunction Devices for Wide Charge Imbalance Tolerance
21天前
已完结
High Breakdown Voltage (<tex>$≫$</tex>1000 V) Semi-Superjunction MOSFETs Using 600-V Class Superjunction MOSFET Process
27天前
已完结
Optimization of Specific on-Resistance of Semisuperjunction Trench MOSFETs with Charge Balance
27天前
已完结
High Performance Termination Design and Fabrication for SiC MOSFET Device
2个月前
已完结
Demonstration of High-Performance 0.17-mΩ⋅cm²/800-V 4H-SiC Super-Junction Schottky Diodes via Multiepitaxial Growth and Channeled Implantation Techniques
2个月前
已完结
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