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50 积分 2022-10-21 加入
Design and Optimization of 650V/1200V Silicon Carbide MOSFET with Hybrid Junction Termination Extension (Hybrid-JTE)
1个月前
已完结
A Synchronously Implanted Termination for 1200V SiC Trench-Gate MOSFET
1个月前
已完结
4H-SiC trench gate MOSFETs with field plate termination
1个月前
已完结
Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination
1个月前
已完结
Improved etched multistep JTE for UHV SiC power devices
1个月前
已完结
Comparative Study on Charge-Imbalance Super Junction Termination for 3kV 4H-SiC Full-SJ and Semi-SJ Devices
1个月前
已完结
A Comprehensive Design of Edge Terminations for High-Voltage SiC Devices Utilizing P-Type Epitaxial Layer
1个月前
已完结
Process-Robust Stepped-Ring-Assisted Junction Termination Extension Design for 6.5 kV SiC PiN Diodes
1个月前
已完结
Stability and 2-D Simulation Studies of Avalanche Breakdown in 4H-SiC DMOSFETs With JTE
3个月前
已完结
Failure Mechanism and New Technique of Junction Termination Extension Under Pulsed Stress
3个月前
已完结
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