Lv1
40 积分 2022-10-21 加入
High Performance Termination Design and Fabrication for SiC MOSFET Device
8天前
已完结
Demonstration of High-Performance 0.17-mΩ⋅cm²/800-V 4H-SiC Super-Junction Schottky Diodes via Multiepitaxial Growth and Channeled Implantation Techniques
9天前
已完结
Development of SiC Superjunction MOSFET: A Review
9天前
已完结
Hybrid Termination With Wide Trench for 4H-SiC Super-Junction Devices
9天前
已完结
Termination Design of 6.5kV SiC MOSFET with Epitaxial Current Spreading Layer
10天前
已完结
Avalanche and Short Circuit Withstand Capabilities in 3.3 kV-Class SiC Superjunction MOSFET
10天前
已完结
Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth
10天前
已完结
4.15 kV/4.6 mΩ⋅cm² 4H-SiC Epi-Refilled Super-Junction Schottky Diode With Ring Assisted Super-Junction Termination Extension
10天前
已完结
CNN-Based Rapid Co-Optimization of BV and RON,sp for 4H-SiC SJ MOSFET
11天前
已完结
Novel High-Tolerance Termination With Resistive Field Plate for 600 V Super-Junction Vertical Double-Diffused MOSFET
11天前
已完结
皖公网安备34019202002308
