Lv1
60 积分 2022-10-21 加入
Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination
2天前
已完结
Improved etched multistep JTE for UHV SiC power devices
3天前
已完结
Comparative Study on Charge-Imbalance Super Junction Termination for 3kV 4H-SiC Full-SJ and Semi-SJ Devices
5天前
已完结
A Comprehensive Design of Edge Terminations for High-Voltage SiC Devices Utilizing P-Type Epitaxial Layer
7天前
已完结
Process-Robust Stepped-Ring-Assisted Junction Termination Extension Design for 6.5 kV SiC PiN Diodes
7天前
已完结
Stability and 2-D Simulation Studies of Avalanche Breakdown in 4H-SiC DMOSFETs With JTE
1个月前
已完结
Failure Mechanism and New Technique of Junction Termination Extension Under Pulsed Stress
1个月前
已完结
Trench superjunction VDMOS with charge imbalance cells
2个月前
已完结
New Failure Mechanism Induced by Current Limit for Superjunction MOSFET Under Single-Pulse UIS Stress
2个月前
已完结
Trench superjunction VDMOS with charge imbalance cells
2个月前
已完结
皖公网安备34019202002308
