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248 积分 2024-11-04 加入
2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2
3个月前
已完结
1200-V/10-A Low Thermal Resistance Ga2O3 Schottky Barrier Diode With Composite Terminal Structure and Substrate Thinning
3个月前
已完结
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
3个月前
已完结
120 A/1.78 kV p-Cr2O3/n-β -Ga2O3 Heterojunction PN Diodes With Slanted Mesa Edge Termination
3个月前
已完结
From architectures to device physics: Pathways to integrate lateral, vertical, and heterogeneous schemes in gallium oxide transistors
3个月前
已关闭
Transparent conducting p-type NiO thin films prepared by magnetron sputtering
4个月前
已完结
Political Discontent in China Is Associated with Isolating Personality Traits
5个月前
已完结
2.5 kV/674 MW/cm2 or 100 A/2 kV β-Ga2O3 heterojunction diodes with large surge current and small recovery time
7个月前
已完结
Effects of NiO on electrical properties of NiAu-based ohmic contacts for p-type GaN
9个月前
已完结
Electrical properties of vertical Cu2O/β-Ga2O3 (001) p–n diodes
11个月前
已完结
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