Lv1
44 积分 2025-09-19 加入
Effect of Point Defects on Electronic Structure of Monolayer GeS
23小时前
已完结
Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device
1天前
已完结
High-performance and energy-efficient monolayer GaTe MOSFETs for advanced semiconductor devices
1个月前
已关闭
Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors
1个月前
已完结
Orientation‐Engineered PtTe 2 Schottky FETs: Quantum Transport Insights for Dopant‐Free Advanced Technology Nodes
1个月前
已完结
Electrically Tunable Quasi-Flat Bands, Conductance and Field Effect Transistor in Phosphorene
1个月前
已完结
Tailored Transport and Logic Capability of 2D Group IV-VI Semiconductor-Based Multibridge Channel FETs
2个月前
已完结
Ab initio exploration of electronic and quantum transport properties of multilayer sub-10 nm GeS MOSFETs
2个月前
已完结
Phosphorene analogues: Isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure
2个月前
已完结
Liquid Exfoliation Few-Layer SnSe Nanosheets with Tunable Band Gap
2个月前
已完结
皖公网安备34019202002308
