Lv8 热心小伙伴
8231 积分 2021-02-26 加入
A novel p-GaN HEMT with superjunction silicon substrate for improved current collapse
10天前
已完结
DrGaN: an Integrated CMOS Driver-GaN Power Switch Technology on 300mm GaN-on-Si with E-mode GaN MOSHEMT and 3D Monolithic Si PMOS
23天前
已完结
High-Performance 1200-V p-GaN Gate HEMT on Standard 650-V GaN-on-Si Epi-Wafer
23天前
已完结
(Invited) Thermal-Expansion Matched and CMOS Fab-Friendly Engineered Substrates Enabling Unmatched Cost, Performance & Application Scale for GaN Devices
24天前
已关闭
GaN Epitaxial Layer Dislocation Characterization Using ECCI and TEM
24天前
已完结
High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts
25天前
已完结
Achieving low ON-resistance in E-mode regrown U-shaped p-GaN gate multi-channel HEMT
29天前
已完结
HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack
2个月前
已完结
皖公网安备34019202002308
