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80 积分 2025-12-17 加入
A Statistical Approach for Evaluating the Spatial Distribution and Local Atomic Environment of Dopants Using Atom Probe Tomography
1个月前
已完结
Physical and Electrical Properties of MOCVD and ALD Deposited HfZrO4 Gate Dielectrics for 32nm CMOS High Performance Logic SOI Technologies
2个月前
已关闭
Three-Dimensional Elemental Analysis of Commercial 45 nm Node Device with High-$k$/Metal Gate Stack by Atom Probe Tomography
2个月前
已关闭
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