Lv4
416 积分 2022-04-18 加入
Model of dielectric breakdown in hafnia-based ferroelectric capacitors
1个月前
已完结
Degradation mechanism differences between TiN- and TaN-electrode HZO-based FeRAMs analyzed by current mechanism fitting
1个月前
已完结
Polarization and Reliability Enhancement for Ferroelectric Capacitors by Interface Engineering Through Crystalline TaN
1个月前
已完结
1T1C HfO 2 FeRAM Materials
1个月前
已完结
1T1C HfO 2 FeRAM Materials
1个月前
已关闭
Defect Engineering of HfO 2 -Based Thin Films for Simultaneously Achieving High Polarization and Excellent Fatigue Resistance: Mediating Double-Edged Role of Oxygen Vacancies
1个月前
已完结
Enhancement of Ferroelectricity in Hf 0.5 Zr 0.5 O 2 via Pre-Crystallization and Interface Engineering at Ultra-Low Temperature (300 °C) Annealing
1个月前
已完结
Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf0.5Zr0.5O2 Films
1个月前
已完结
Peak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge Effects
1个月前
已完结
Interfacial Layer Engineering in Zr-Doped HfO 2 Ferroelectric Films: Trade-Off Between Polarization Enhancement and Reliability
1个月前
已完结
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