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110 积分 2025-10-28 加入
A low switching loss GaN trench MOSFET design utilizing a triple-shield structure
16小时前
已完结
Quasi-Vertical GaN-Based Trench Gate MOSFETs Treated with Fluorine-Plasma
5天前
已完结
787-V GaN-on-Si Quasi-Vertical Trench MOSFET With Thick Bottom SiO 2
5天前
已完结
Observation of avalanche breakdown characteristics in quasi-vertical GaN-on-Si trench MOSFETs
16天前
已关闭
Fabrication of Ampere-Class $p$-Cu2O/$n-\beta$-Ga2O3 Trench Heterojunction Barrier Schottky Diodes and Double-Pulse Evaluation
17天前
已完结
Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage
17天前
已完结
Orientation-dependent interface-state properties underlying the “V”-shaped difference in temperature-dependent reverse characteristics of [010]- and [100]-oriented trench-MOSSBDs
19天前
已完结
2.3-kV β-Ga2O3 heterojunction barrier Schottky diode with Cu anode and robust thermal reliability
22天前
已完结
Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
25天前
已完结
Electrical isolation of GaN by ion implantation damage: Experiment and model
25天前
已完结
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