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40 积分 2024-09-05 加入
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
3天前
已完结
Electron mobility limited by surface and interface roughness scattering in AlxGa1−xN/GaN quantum wells
4天前
已完结
ReRAM-Based Neuromorphic Computing
4个月前
已完结
Design of High Baliga’s Figure-of-Merit P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with P-AlGaN Field Plates
9个月前
已完结
Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors
9个月前
已完结
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