Lv12
56 积分 2025-11-10 加入
Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide
1小时前
已完结
Uniformity And Reliability Of 1.5 nm Direct Tunneling Gate Oxide MOSFETs
1小时前
已完结
A Multifunctional Double Pulse Tester for Cascode GaN Devices
1个月前
已完结
Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance
1个月前
已完结
Highly Scaled GaN Complementary Technology on a Silicon Substrate
1个月前
已完结
Mosaic structure in epitaxial thin films having large lattice mismatch
1个月前
已完结
X-ray diffraction of III-nitrides
1个月前
已完结
Crystallization Effects of Nanocrystalline GaN Films on Field Emission
3个月前
已完结
Study on the surface morphology of GaN films deposited on MoS2 layer via plasma-assisted molecular beam epitaxy
3个月前
已完结
Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
3个月前
已关闭
皖公网安备34019202002308
