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52 积分 2025-11-10 加入
Electronic properties of extended surface defects in homoepitaxial GaN diodes
1小时前
待确认
Structural, optical, and electrical characterization and performance comparison of AlGaN/GaN HEMT structures with different buffer layers
1天前
已完结
The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor
13天前
已关闭
Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications
13天前
已完结
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD
13天前
已完结
Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
14天前
已完结
A Study on the Impact of Dislocation Density on Leakage Current in Vertical GaN-on-GaN p-n Diodes
15天前
已完结
Sub‐Micron thick Step‐Graded AlGaN Buffer on Silicon with a High Buffer Breakdown Field
20天前
已完结
Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
21天前
已完结
Low‐Pressure, Modified Halide Vapor‐Phase Epitaxy for Chemically Pure GaN Epilayers
21天前
已完结
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