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1470 积分 2023-09-04 加入
Preparation and application of advanced nanoporous GaN materials
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Hydride Vapor Phase Epitaxy Flow Field Design and Uniformity Optimization for 4-in. Gallium Nitride Crystal Substrates
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High-speed and long-time growth of GaN by suppressing gas-phase reaction in the oxide vapor phase epitaxy method
7天前
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Growth behavior and optical properties of V-pits in GaN grown by a Na flux method
12天前
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Effects of morphology during coalescence of GaN crystals on dislocation behavior in the Na-flux point seed technique
20天前
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Optical properties of conductive and semi-insulating HVPE-GaN crystals
1个月前
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Studying the effect of temperature and pressure on GaN crystals via the Na-flux method
1个月前
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The influence of the interaction mechanism between impurities and point defects on the yellow luminescence band of GaN
2个月前
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The effect of GaN single crystal substrate characteristics on homo-epitaxial GaN films
3个月前
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Machining processes for sapphire wafers: a literature review
3个月前
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