Lv11
20 积分 2023-06-25 加入
Broadband High‐Power GaN SPDT Switch Using Stacked‐Shunt Fets and Resonance Inductors
1小时前
待确认
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
1个月前
已完结
Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application
5个月前
已完结
Gallium droplet formation during MOVPE and thermal annealing of GaN
6个月前
已完结
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