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Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application
14小时前
待确认
Gallium droplet formation during MOVPE and thermal annealing of GaN
7天前
已完结
High‐Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication
20天前
已关闭
Substrate Effects in GaN-on-Silicon RF Device Technology
20天前
已完结
Small-signal switch model of GaN HEMTs for MMIC applications
1个月前
已完结
晶体管级异质集成技术及其典型应用
4个月前
已完结
Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation
8个月前
已完结
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
9个月前
已完结
CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson’s figure-of-merit of 8.8 THz V
10个月前
已完结
AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs
11个月前
已完结
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