Lv11
20 积分 2023-06-25 加入
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
4小时前
已完结
Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
4小时前
已完结
A compact antenna aperture tuner with high voltage enhancement-mode p-GaN HEMT switch
1个月前
已完结
Ferroelectric‐Gated HfZrO2/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications
3个月前
已完结
Insertion loss and linearity of III‐nitride microwave switches
3个月前
已完结
Integration of ferroelectrics with III-N transistors for high performance millimeter-wave applications
4个月前
已完结
Performance Analysis and Insights into Schottky-Gate and Insulated-Gate GaN-on-Si RF Switch Devices: A Comparative Study on RF Isolation
4个月前
已完结
Broadband High‐Power GaN SPDT Switch Using Stacked‐Shunt Fets and Resonance Inductors
4个月前
已完结
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
6个月前
已完结
Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application
10个月前
已完结
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