Lv1
10 积分 2023-06-25 加入
Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance
1个月前
已完结
High Power Density Millimeter-Wave Ultra-thin InGaN Channel DH-HEMTs
1个月前
已完结
Efficient TCAD Thermal Analysis of Semiconductor Devices
1个月前
已完结
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
1个月前
已完结
Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
1个月前
已完结
A compact antenna aperture tuner with high voltage enhancement-mode p-GaN HEMT switch
3个月前
已完结
Ferroelectric‐Gated HfZrO2/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications
5个月前
已完结
Insertion loss and linearity of III‐nitride microwave switches
5个月前
已完结
Integration of ferroelectrics with III-N transistors for high performance millimeter-wave applications
5个月前
已完结
Performance Analysis and Insights into Schottky-Gate and Insulated-Gate GaN-on-Si RF Switch Devices: A Comparative Study on RF Isolation
6个月前
已完结