Lv21
180 积分 2026-06-28 加入
Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO2-Based Ferroelectric Field-Effect Transistors
2个月前
已完结
Effects of Stress and Depolarization on Electrical Behaviors of Ferroelectric Field-Effect Transistor
2个月前
已完结
Comprehensive TCAD-Based Validation of Interface Trap-Assisted Ferroelectric Polarization in Ferroelectric-Gate Field-Effect Transistor Memory
2个月前
已完结
Hf0.5Zr0.5O₂-Based Ferroelectric Field-Effect Transistors With HfO₂ Seed Layers for Radiation-Hard Nonvolatile Memory Applications
2个月前
已完结
Impacts of Zr content of HfZrOx-Based FeFET memory on resilience towards proton radiation
2个月前
已完结
皖公网安备34019202002308
